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ZXMN10A25K
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source voltage
Gate-Source voltage
Characteristic
(Note 7)
Symbol
V DSS
V GS
Value
100
± 20
6.4
Unit
V
V
Continuous Drain current
V GS = 10V
T A = +70 ° C (Note 7)
I D
5
A
(Note 6)
4.2
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 8)
(Note 7)
(Note 8)
I DM
I S
I SM
21
10
21
A
A
A
Thermal Characteristics
Characteristic
(Note 6)
Symbol
Value
4.25
34
Unit
Power dissipation
Linear derating factor
(Note 7)
P D
9.85
78.7
W
mW/ ° C
(Note 9)
(Note 6)
2.11
16.8
29.4
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 7)
(Note 9)
(Note 10)
R θ JA
R θ JL
T J , T STG
12.7
59.1
1.43
-55 to 150
° C/W
° C
Notes:
6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
8. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN10A25K
Document number: DS33569 Rev. 3 - 2
2 of 8
www.diodes.com
July 2012
? Diodes Incorporated
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